View IRFR2405PBF_7394181.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IRFR2405PBF irfu2405pbf hexfet ? power mosfet seventh generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through- hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. s d g parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 56 i d @ t c = 100c continuous drain current, v gs @ 10v 40 a i dm pulsed drain current 220 p d @t c = 25c power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 130 mj i ar avalanche current 34 a e ar repetitive avalanche energy 11 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings v dss = 55v r ds(on) = 0.016 ? i d = 56a description www.kersemi.com 1 surface mount (irfr2405) straight lead (irfu2405) advanced process technology dynamic dv/dt rating fast switching fully avalanche rated lead-free pd - 95369a d-pak i-pak irfr2405 irfu2405 parameter typ. max. units r jc junction-to-case ??? 1.4 r ja junction-to-ambient (pcb mount)* ??? 50 c/w r ja junction-to-ambient ??? 110 thermal resistance
2 www.kersemi.com
parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.052 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 0.0118 0.016 ? v gs = 10v, i d = 34a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = 10v, i d = 250a g fs forward transconductance 30 ??? ??? s v ds = 25v, i d = 34a ??? ??? 20 a v ds = 55v, v gs = 0v ??? ??? 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 200 v gs = 20v gate-to-source reverse leakage ??? ??? -200 na v gs = -20v q g total gate charge ??? 70 110 i d = 34a q gs gate-to-source charge ??? 16 23 nc v ds = 44v q gd gate-to-drain ("miller") charge ??? 19 29 v gs = 10v t d(on) turn-on delay time ??? 15 ??? v dd = 28v t r rise time ??? 130 ??? i d = 34a t d(off) turn-off delay time ??? 55 ??? r g = 6.8 ? t f fall time ??? 78 ??? v gs = 10v between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 2430 ??? v gs = 0v c oss output capacitance ??? 470 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 100 ??? ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 2040 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 350 ??? v gs = 0v, v ds = 44v, ? = 1.0mhz c oss eff. effective output capacitance ??? 350 ??? v gs = 0v, v ds = 0v to 44v nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns

i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. i sd 34a, di/dt 190a/s, v dd v (br)dss , t j 175c starting t j = 25c, l = 0.22mh r g = 25 ? , i as = 34a. pulse width 300s; duty cycle 2%. s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 34a, v gs = 0v t rr reverse recovery time ??? 62 93 ns t j = 25c, i f = 34a q rr reverse recoverycharge ??? 170 260 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 56 220 c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a
www.kersemi.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 56a
4 www.kersemi.com
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 34a v = 11v ds v = 27v ds v = 44v ds 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 0 800 1600 2400 3200 4000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss
www.kersemi.com 5 fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d limited by package
6 www.kersemi.com
q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 40 80 120 160 200 240 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 14a 24a 34a
www.kersemi.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets
peak diode recovery dv/dt test circuit ? !" ? #$"%# ? & !"'"(#)) ? *
+'#"'+ # ? ,-#"& '# ? .' /# ? ,#0#& '# +' # $
8 www.kersemi.com

12 in the assembly line "a" as s e mb le d on ww 16, 1999 example: with assembly t his is an irf r120 lot code 1234 year 9 = 199 9 dat e code week 16 part number logo int ernational rectifier assembly lot code 916a irfu120 34 year 9 = 1999 dat e code or p = designates lead-f ree product (optional) note: "p" in ass embly line position i ndi cates "l ead- f r ee" 12 34 week 16 a = assembly site code part number irf u120 line a logo lot code assembly international rectifier
www.kersemi.com 9

assembly example: with assembly this is an irfu120 year 9 = 199 9 dat e code line a week 19 in the assembly line "a" as s e mble d on ww 19, 1999 lot code 5678 part number 56 irfu120 international logo rectifier lot code 919a 78 note: "p" in ass embly line pos ition indicates "l ead-f r ee" 56 78 as s e mb l y lot code rectifier logo international irfu120 part number we e k 1 9 dat e code year 9 = 1999 a = as s e mb l y s i t e code p = designates lead-free product (optional)
10 www.kersemi.com

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl n otes : 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters ( inches ). 3 . outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

▲Up To Search▲

Price & Availability of IRFR2405PBF

	To Download IRFR2405PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .